The scientists have for the first time devised a technology, called block co-polymer lithography, to make square, nanoscale, chemical patterns -- from the bottom up -- that may be used in the manufacture of integrated circuit chips as early as 2011. Led by Craig Hawker, materials professor and director of the Materials Research Laboratory at UCSB, with professors Glenn Fredrickson and Edward J. Kramer, the researchers have developed a novel process for creating features on silicon wafers that are between five and 20 nanometers thick. This will dramatically increase the computer's processing speed.